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Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1125 DESCRIPTION *With TO-220 package *Complement to type 2SC2633 *High breakdown voltage APPLICATIONS *For audio frequency high voltage amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1.5 150 -55~150 UNIT V V V mA mA W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1mA ,IB=0 B 2SA1125 MIN -150 -5 TYP. MAX UNIT V V IE=-10A ,IC=0 IC=-30mA; IB=-3mA VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-10mA ; VCE=-10V -1.0 -1 -1 90 450 5 200 V A A pF MHz hFE Classifications Q 90-155 R 130-220 S 185-330 T 260-450 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1125 Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
Price & Availability of 2SA1125 |
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